Ruojian Zhang
Phone: (972) 732-1001
Fax: (972) 732-9218
E-Mail: zhang@slater-matsil.com

BIOGRAPHY

Ruojian Zhang, a registered patent agent, provides a unique combination of significant research and practical engineering experience. He has obtained advanced engineering degrees and conducted research in microwave technology and solid-state electronics, in both his native China and in the United States, including doctorate level research in solid-state electronics. Ruojian also has over 10 years of practical engineering experience, primarily in telecommunications, computer systems, and software design and development.

Ruojian has been recognized for his outstanding contributions to high-tech start up companies and established companies such as Cisco Systems and Nortel Networks. He takes all steps to value and protect a client’s intellectual property for its theoretical and strategic application, as well as for its immediate impact on the client’s business objectives. Ruojian is a native speaker of Mandarin Chinese and understands the needs and requirements of both Asian clients and United States clients conducting business in Asia.

EDUCATION

Ruojian graduated with a B.S. in Electrical Engineering in 1987, received a Master's degree in 1990 in Electrical Engineering specializing in Microwave and Electromagnetic Field technology, both from Nanjing University, PRC, and graduated from Southern Methodist University in 1995 with a Master's degree specializing in Solid State Electronics. Ruojian has also undertaken significant research in Solid State Electronics at Southern Methodist University, where he has passed his written and oral examinations for a doctorate degree in Electrical Engineering.

MEMBERSHIPS

Ruojian is registered to practice before the United States Patent and Trademark Office.

PUBLICATIONS

Ruojian has published a number of technical papers, including:

• Butler, C. and Zhang, R., l/f Noise and Electromigration in Multi-Layered VIA Structures, 39 Solid State Electronics 281 (1996).
• Zhang, R. and Butler, C., Detection of Via Electromigration in VLSI Circuit Metallizations by 1/f Noise Measurements, Six Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices Symposium, p. 70 (1994).